pjd1616c npn epitaxial silicon transistor 1-4 2002/01.rev.a audio freq uency po wer amplifier medium speed swit ching pw 10ms, duty cycle 50% characteristic symbol test condition min typ max unit collector cutoff current emitter cutoff current *dc current gain **base emitter on voltage *collector emitter saturation voltage *base emitter saturation voltage output capacitance current gain bandwidth product turn on time storage t ime fall time i cbo i ebo h fe 1 h fe 2 v be (on) v ce (sat) v be (sat) c ob f t ton ts tf v cb =60v,i e =0 v eb =6v,i c =0 v ce =2v,i c =50ma v ce =2v,i c =0.5a v ce =2v,i c =20ma i c =400ma,i b =40ma ic=500ma,i b =50ma v cb =10v,i e =0,f=1mhz v ce =2v,i c =100ma v cc =10v,i c =100ma i b 1= -i b 2=10ma v be (off)= -2~-3v 135 81 600 100 640 0.15 0.9 19 160 0.07 0.95 0.07 100 100 400 700 0.3 1.2 na na mv v v pf mhz s s s pulse test:pw 350 s, duty cycle 2% classification y g l hfe(1) 135-270 200-400 300-600 characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) *collector current (pulse) collector dissipation to-92 sot- 23 junction temperature storage t e mperature v cbo v ceo v ebo i c i c p d p d t j tstg 120 60 6 0.5 1 0.75 0.3 150 -55~150 v v v a a w w device operating operature package pjd1616cct to-92 PJD1616CCX -20 +85 sot-23 to-92 sot-23 absolute maximum ratings (t a = 25 ) electrical characteristics (t a=25 ) h fe (1) classification p in : 1. emitter 2. colletor 3. base p in : 1. base 2. emitter 3. colletor ordering information
pjd1616c npn epitaxial silicon transistor 2-4 2002/01.rev.a static characteristic static characteristic dc current gain voltage base-emi tter sat uration voltage ollector-emitter sat uration safe operating area power derating
pjd1616c npn epitaxial silicon transistor 3-4 2002/01.rev.a collector output capacit ance switching time current gain-bandwidth product
pjd1616c npn epitaxial silicon transistor 4-4 2002/01.rev.a
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